Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs

Two-step gate-recess process combining selective wet-etching and
digital wet-etching for InAlAs/InGaAs InP-based HEMTs

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توضیحات دمو: تصویر صفحه اول
حجم دمو:262 کیلوبایت
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